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 Si1302DL
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30 0.700 @ VGS = 4.5 V 0.53
rDS(on) (W)
0.480 @ VGS = 10 V
ID (A)
0.64
SOT-323 SC-70 (3-LEADS)
G 1 Marking Code KA XX YY Lot Traceability and Date Code Part # Code Top View 3 D
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C IDM IS 0.26 0.31 0.20 -55 to 150
Symbol
VDS VGS
5 secs
30
Steady State
Unit
V
"20 0.64 0.60 0.48 1.5 0.23 0.28 0.18
ID 0.51 A
W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71249 S-02367--Rev. C, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
355 380 285
Maximum
400 450 340
Unit
_C/W C/W
1
Si1302DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.6 A VGS = 4.5 V, ID = 0.2 A VDS = 15 V, ID = 0.6 A IS = 0.23 A, VGS = 0 V 1.5 0.410 0.600 0.75 0.8 1.2 0.480 0.700 1 "100 1 5 V nA mA m A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/ms VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 0.6 A 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 ns 1.4 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0 1.0
Transfer Characteristics
0.8 I D - Drain Current (A)
VGS = 10 thru 4 V I D - Drain Current (A)
0.8
0.6
0.6
0.4 3V 0.2
0.4 TC = 125_C 0.2 25_C -55_C
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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2
Document Number: 71249 S-02367--Rev. C, 23-Oct-00
Si1302DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
1.6 r DS(on) - On-Resistance ( W ) 1.4 1.2 1.0 0.8 0.6 VGS = 10 V 0.4 0.2 0.0 0.0 10 VGS = 4.5 V C - Capacitance (pF) 60 Ciss
Vishay Siliconix
Capacitance
50
40
30 Coss Crss
20
0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 0.6 A 8 1.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 0.6 A
r DS(on) - On-Resistance ( W) (Normalized) 0.4 0.6 0.8 1.0
1.6
1.4
6
1.2
4
1.0
2
0.8
0 0.0
0.2
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1 1.8
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
1.5
I S - Source Current (A)
1.2 ID = 0.6 A 0.9
TJ = 150_C
0.6
TJ = 25_C
0.3
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71249 S-02367--Rev. C, 23-Oct-00
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3
Si1302DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 5
Single Pulse Power
0.2 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W)
4
3 TA = 25_C 2
-0.2
-0.4
1
-0.6 -50
-25
0
25
50
75
100
125
150
0 10-2
10-1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 360_C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10
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4
Document Number: 71249 S-02367--Rev. C, 23-Oct-00
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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